The impact of trapping centers on AlGaN/GaN resonant tunneling diode

被引：0

作者：

Chen, Haoran ^{[1
]}

Yang, Lin ^{[1
]}

Liu, Xiaoxian ^{[1
]}

Zhu, Zhangming ^{[1
]}

Luo, Jun ^{[1
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China

来源：

IEICE ELECTRONICS EXPRESS | 2013年 / 10卷 / 19期

基金：

中国国家自然科学基金;

关键词：

GaN; resonant tunneling diode; trapping center; quantum well; TRAPS;

D O I：

10.1587/elex.10.20130588

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a simulation for aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level trapping centers into the polarized AlGaN/GaN/AlGaN quantum well. Theoretical analysis reveals that the degradations of NDR characteristics in GaN based RTDs are actually caused by the combined actions of the activation energy and the trap density. Furthermore, the trapping centers with high activation energy play a dominant role in the degradation of negative differential resistance (NDR) characteristics.

引用

页数：6