Germanium-Tin Semiconductors for Silicon-Compatible Mid-Infrared Photonics

被引：0

作者：

Assali, Simone ^{[1
]}

Attiaoui, Anis ^{[1
]}

Bouthillier, Etienne ^{[1
]}

Del Vecchio, Patrick ^{[1
]}

Kumar, Aashish ^{[1
]}

Mukherjee, Samik ^{[1
]}

Nicolas, Jerome ^{[1
]}

Moutanabbir, Oussama ^{[1
]}

机构：

[1] Ecole Polytech Montreal, Dept Engn Phys, Montreal, PQ, Canada

来源：

2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2019年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GeSn alloys have recently been the subject of extensive investigations as a new platform to engineer the band structure and directness in group IV semiconductors thus providing a rich playground to implement silicon-compatible photonics and optoelectronics. Herein, we discuss the growth of these metastable semiconductors and their use in a variety of silicon-compatible devices. We will also discuss the effects of strain and Sn content on the optical, electronic, and structural properties of Sn-rich group IV semiconductors. Comments and questions should be directed to the OSA Conference Papers staff (tel: +1 202.416.6191, e-mail: cstech@osa.org). (c) 2019 The Author(s)

引用

页数：2

共 4 条

[1] Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation
Assali, S.
Nicolas, J.
Moutanabbir, O.
[J]. JOURNAL OF APPLIED PHYSICS, 2019, 125 (02)
[2] Atomically uniform Sn-rich GeSn semiconductors with 3.0-3.5 μm room-temperature optical emission
Assali, S.
Nicolas, J.
Mukherjee, S.
Dijkstra, A.
Moutanabbir, O.
[J]. APPLIED PHYSICS LETTERS, 2018, 112 (25)
[3] Indirect-to-direct band gap transition in relaxed and strained Ge1-x-ySixSny ternary alloys
Attiaoui, Anis
Moutanabbir, Oussama
[J]. JOURNAL OF APPLIED PHYSICS, 2014, 116 (06)
[4] Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors
Mukherjee, S.
Kodali, N.
Isheim, D.
Wirths, S.
Hartmann, J. M.
Buca, D.
Seidman, D. N.
Moutanabbir, O.
[J]. PHYSICAL REVIEW B, 2017, 95 (16)

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