Doping-induced change of carrier mobilities in poly(3-hexylthiophene) films with different stacking structures

被引：75
作者：
Jiang, X
Harima, Y
Yamashita, K
Tada, Y
Ohshita, J
Kunai, A
机构：
[1] Hiroshima Univ, Grad Sch Engn, Higashihiroshima 7398527, Japan
[2] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 7398521, Japan
来源：
CHEMICAL PHYSICS LETTERS | 2002年 / 364卷 / 5-6期
关键词：
D O I：
10.1016/S0009-2614(02)01383-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Mobilities of positive charge carriers in poly(3-hexylthiophene) (PHT) films of 54%, 70%, 81%, and 97% in regio-regularity were electrochemically measured over a range of doping levels. The results show that better ordered stacking structures enhance mobilities, but affect little features of the mobility change by doping. The common doping level of ca. 1% for the onset of the drastic mobility increase implies that the pi-pi stacking structures facilitating a charge transport in neutral or lightly doped PHT films are not responsible for the evolution of metallic conduction in PHT films. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：616 / 620
页数：5
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