Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on GaAs/AlGaAs quantum well intermixing

被引：33

作者：

Deenapanray, PNK ^{[1
]}

Tan, HH ^{[1
]}

Fu, L ^{[1
]}

Jagadish, C ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 04期

关键词：

D O I：

10.1149/1.1391000

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Plasma-enhanced chemical vapor deposition of SiO2 at temperatures below 300 degrees C was used in conjunction with rapid thermal annealing for quantum well intermixing. Variable blue shifts of up to similar to 200 meV were observed while still maintaining clearly resolved exitonic behavior. The energy shifts were similar for capping layers deposited below 200 degrees C, which were significantly higher than those obtained for SiO2 layers deposited at 300 degrees C. We demonstrate that the increased porosity of SiO2 capping layers deposited below 200 degrees C is responsible for the enhanced intermixing. The evidence for porosity-enhanced intermixing was obtained from spectroscopic ellipsometry, Fourier transform infrared spectroscopy, and P-etch rate measurements. (C) 2000 The Electrochemical Society. S1099-0062(99)11-110-6. All rights reserved.

引用

页码：196 / 199

页数：4

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