Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K

被引：12

作者：

Das, Subhashis ^{[1
]}

Bag, Ankush ^{[2
]}

Kumar, Rahul ^{[1
]}

Biswas, Dhrubes ^{[3
]}

机构：

[1] IIT Kharagpur, Adv Technol Dev Ctr, Kharagpur 721302, W Bengal, India

[2] IIT Mandi, Sch Comp & Elect Engn, Mandi 175005, Himachal Prades, India

[3] IIT Kharagpur, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 03期

关键词：

Fast response; acetone sensor; InGaN/GaN; resistive device; GAS SENSOR; CRITICAL THICKNESS; THIN-FILM; TEMPERATURE; DIODES;

D O I：

10.1109/LED.2017.2647831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new and exciting resistive gas sensor based on Ni/InGaN/GaN heterostructure, grown by plasma assisted molecular beam epitaxy, has been developed to efficiently detect acetone very rapidly at low temperature. Non-rectifying I-V characteristics of epitaxially relaxed InGaN with Ni contact have been revealed at 373 K. An incremental current of 11.74 mu A has been found at 373 K with the exposure of 100 ppm of acetone vapor at an operating bias of 0.4 V. Sensitivity has been obtained from transient response curves. Most importantly, very fast response/recovery characteristics with good baseline recovery have been witnessed. The response time and recovery time have been found to be similar to 7.6-8.4 s and similar to 4.5-19.1 s. A possible explanation, including Langmuir adsorption-desorption isotherm, has also been discussed.

引用

页码：383 / 386

页数：4

共 33 条

[1] High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing [J].

Ahn, Woojin ;

Seok, Ogyun ;

Song, Seung Min ;

Han, Min-Koo ;

Ha, Min-Woo .

JOURNAL OF CRYSTAL GROWTH, 2013, 378 :600-603

[2] Evolution and Analysis of Nitride Surface and Interfaces by Statistical Techniques: A Correlation with RHEED through Kinetic Roughening [J].

Bag, Ankush ;

Kumar, Rahul ;

Mukhopadhyay, Partha ;

Mahata, Mihir K. ;

Chakraborty, Apurba ;

Ghosh, Saptarsi ;

Jana, Sanjay K. ;

Biswas, Dhrubes .

ELECTRONIC MATERIALS LETTERS, 2015, 11 (04) :707-716

[3] Operating Temperature, Repeatability, and Selectivity of TiO2 Nanotube-Based Acetone Sensor: Influence of Pd and Ni Nanoparticle Modifications [J].

Bhattacharyya, Partha ;

Bhowmik, Basanta ;

Fecht, Hans-J .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2015, 15 (03) :376-383

[4] Low temperature acetone detection by p-type nano-titania thin film: Equivalent circuit model and sensing mechanism [J].

Bhowmik, B. ;

Dutta, K. ;

Hazra, A. ;

Bhattacharyya, P. .

SOLID-STATE ELECTRONICS, 2014, 99 :84-92

[5] InGaN/GaN multi-quantum-well ultraviolet photosensors by capping an unactivated Mg-doped GaN layer [J].

Chang, P. C. ;

Yu, C. L. .

APPLIED PHYSICS LETTERS, 2007, 91 (14)

[6] Highly sensitive ZnO nanowire CO sensors with the adsorption of Au nanoparticles [J].

Chang, Shoou-Jinn ;

Hsueh, Ting-Jen ;

Chen, I-Cherng ;

Huang, Bohr-Ran .

NANOTECHNOLOGY, 2008, 19 (17)

[7] Schottky-diode hydrogen sensor based on InGaN/GaN multiple quantum wells [J].

Chen, Gang ;

Choi, Anthony Hoi Wai ;

Lai, Pui To ;

Tang, Wing Man .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (01)

[8] A Study on InGaN/GaN Multiple Quantum-Well Hydrogen Sensor with HfTiO as Gate Dielectric [J].

Chen, Gang ;

Choi, A. H. W. ;

Lai, P. T. .

2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 2009, :127-130

[9] On an Ammonia Gas Sensor Based on a Pt/AlGaN Heterostructure Field-Effect Transistor [J].

Chen, Tai-You ;

Chen, Huey-Ing ;

Hsu, Chi-Shiang ;

Huang, Chien-Chang ;

Chang, Chung-Fu ;

Chou, Po-Cheng ;

Liu, Wen-Chau .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) :612-614

[10] An optically detectable CO2 sensor utilizing polyethylenimine and starch functionalized InGaN/GaN multiple quantum wells [J].

Chen, Y. C. ;

Shih, H. Y. ;

Chen, J. Y. ;

Tan, W. J. ;

Chen, Y. F. .

APPLIED PHYSICS LETTERS, 2013, 103 (02)

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