Current-carrying magnetic states engineering by nonmonotonic potential profile

被引:0
|
作者
Romanov, DA [1 ]
Studenikin, SA [1 ]
Tkachenko, VA [1 ]
Tkachenko, OA [1 ]
机构
[1] NOVOSIBIRSK STATE UNIV, NOVOSIBIRSK 630090, RUSSIA
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We theoretically investigate the dispersion law of the 2D electrons skipping near the edge in weak magnetic fields and being affected by near-edge electrostatic potential of stripe-like gates. The latter potential is shown to modify substantially the electron spectrum and to induce the singularities of the density of states and combined density of states with the inter-dispersion-curve spacing greater than cyclotron energy <(h)over bar omega(c)>, in uniform 2DEG. We refer to a particular design of GaAs/GaAlAs nanostructures mostly suitable for the experimental investigation of predicted magnetotransport and high frequency effects.
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页码:109 / 112
页数:4
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