Effect of Heat Treatment on Electrical Properties of Amorphous Oxide Semiconductor In-Ga-Zn-O Film as a Function of Oxygen Flow Rate

被引：13
作者：
Jung, Chulho [1 ]
Kim, Duckjin [2 ]
Kang, Yong Kyu [2 ]
Yoon, Dae Ho [1 ,2 ]
机构：
[1] Sungkyunkwan Univ, SAINT, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 08期
关键词：
INDIUM-TIN-OXIDE;
D O I：
10.1143/JJAP.48.08HK02
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of heat treatment on the electrical properties of an amorphous In-Ga-Zn-O (a-IGZO) film deposited by radio frequency (rf) magnetron sputtering at room temperature (RT) was investigated as a function of the oxygen flow rate. All of the films deposited with increasing O-2 concentration in the Ar and Ar + O-2 atmospheres exhibited insulating behavior in terms of their electrical properties, but their carrier concentration and resistivity were markedly affected after annealing at 400 degrees C in either a vacuum furnace or an rapid thermal annealing (RTA) system. However, the carrier concentration and resistivity of the films annealed in a normal furnace were not changed, compared with those of the as-deposited films annealed in the vacuum furnace. The difference in the electrical properties as a function of the annealing conditions was attributed to the number of oxygen vacancies. From X-ray photoemission spectroscopy (XPS), we confirmed that the formation of an O-rich surface was reduced by heat treatment under vacuum conditions. The output and transfer characteristics of the thin-film transistors (TFTs) exhibited excellent performance as depletion-mode n-channel field-effect TFTs after being annealed irrespective of the annealing system. (C) 2009 The Japan Society of Applied Physics
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收藏
页码：08HK021 / 08HK024
页数：4
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