Residual end-of-range damage reduction in low-temperature-annealed ion-implanted junctions by using low-doped silicon substrate

It was found that residual damages in BF2+ implanted junctions can be completely suppressed even by annealing at 450 degrees C if the substrate dopant concentration is reduced. This behavior is similar to As+ implanted junctions, where we found that the amount of the deeply distributed residual damage strongly depends on substrate doping concentration(1)). A leakage current as low as 4.23x10(-9) A/cm(2) at reverse-bias of 5V has been achieved in BF2+ implanted junctions annealed at a temperature as low as 450 degrees C, by using n-type substrate with doping concentration of 10(12) cm(-3). This value is almost the same as the value obtained in junctions annealed at high temperature(1000 degrees C). This will enables us to fabricate ultra-high-speed ULSI such as metal-substrate metal-gate SOI CMOS LSI2).