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Fabrication of Si/ZnS Radial Nanowire Heterojunction Arrays for White Light Emitting Devices on Si Substrates
被引:37
作者:
Katiyar, Ajit K.
[1
]
Sinha, Arun Kumar
[1
]
Manna, Santanu
[1
]
Ray, Samit K.
[1
]
机构:
[1] Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India
关键词:
metal-assisted chemical etching;
Si nanowires;
Si/ZnS heterojunction;
nanowire heterojunction;
electroluminescence;
white light emission;
ZNS;
PHOTOLUMINESCENCE;
D O I:
10.1021/am5028605
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.
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页码:15007 / 15014
页数:8
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