Optical properties of MgxZn1-xO thin films deposited on silicon and sapphire substrate by rf magnetron sputtering

被引：4

作者：

Guan, W. L. ^{[1
]}

Lian, J. ^{[2
]}

Yu, Y. X. ^{[1
]}

Sun, Z. Z. ^{[2
]}

Zhao, M. L. ^{[2
]}

Wang, X. ^{[2
]}

Zhang, W. F. ^{[2
]}

机构：

[1] Qilu Normal Univ, Dept Phys, Jinan 250013, Shandong, Peoples R China

[2] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Shandong, Peoples R China

来源：

OPTIK | 2014年 / 125卷 / 18期

关键词：

Semiconductors; MgxZn1-xO films; Optical properties; SPECTROSCOPIC ELLIPSOMETRY; REFRACTIVE-INDEXES; EPITAXIAL-GROWTH; ZINC-OXIDE; ZNO; PHOTOLUMINESCENCE; LUMINESCENCE; EMISSION; DEFECTS;

D O I：

10.1016/j.ijleo.2014.06.007

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The index dispersion at UV-VIS range for polycrystalline MgxZn1-xO films on silicon with different Mg concentration was obtained by spectroscopic ellipsometry (SE) method. It decreases with the increase of the Mg content. Above the relative peak wavelength, they are well fitted by the first-order Sellmeier relation. The band gap of films on sapphire of different Mg content was determined from transmission measurements. Photoluminescence (PL) illustrated that for MgxZn1-xO films every PL peak corresponded to a special excitation wavelength. The wavelength of the PL peak was proportional to the special excitation wavelength. A strong peak was obtained in the blue band for the films due to the large amount of oxygen vacancies caused by excess Zn and Mg atoms, while weak peak at ultraviolet band. (C) 2014 Elsevier GmbH. All rights reserved.

引用

页码：5167 / 5170

页数：4

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