Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique

被引：9

作者：

Gotoh, H. ^{[1
]}

Akasaka, T. ^{[1
]}

Tawara, T. ^{[1
]}

Kobayashi, Y. ^{[1
]}

Makimoto, T. ^{[1
]}

Nakano, H. ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

SOLID STATE COMMUNICATIONS | 2006年 / 138卷 / 12期

关键词：

nitride semiconductors; localized excitons; optical properties; sharp photoluminescence;

D O I：

10.1016/j.ssc.2006.04.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photo luminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 mu m spatial resolution. A sharp PL line (linewidth of < 0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：590 / 593

页数：4

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