Effect of photocatalysts on electrochemical properties and chemical mechanical polishing rate of GaN

被引：38

作者：

Yu, Xuan ^{[1
,2
]}

Zhang, Baoguo ^{[1
,2
]}

Wang, Ru ^{[1
,2
]}

Kao, Zhengxiao ^{[1
,2
]}

Yang, Shenghua ^{[1
,2
]}

Wei, Wei ^{[1
,2
]}

机构：

[1] Hebei Univ Technol, Sch Elect Informat Engn, 5340 Xiping Rd, Tianjin 300130, Peoples R China

[2] Hebei Univ Technol, Tianjin Key Lab Elect Mat & Devices, Tianjin 300130, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 121卷

关键词：

GaN; CMP removal rate; Photocatalyst; CMP; PLANARIZATION; SAPPHIRE; WAFER;

D O I：

10.1016/j.mssp.2020.105387

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The improvement of polishing rate during chemical mechanical polishing of GaN materials has been a research hotspot. Efficient and inexpensive catalysts are important for large-scale industrial production. In this paper, the effects of ZnO, TiO2 and ZrO2 catalysts on the polishing rate in photocatalytic oxidation polishing were studied, and the mechanism of UV photocatalytic oxidation of GaN was analyzed. In combination with ultraviolet light irradiation, three different kinds of catalysts were used in both electrochemical and chemical mechanical pol-ishing experiments with varying pH values in both H2O2 and K2S2O8 systems. The experimental results show that ZrO2 can effectively improve the chemical mechanical polishing rate of GaN wafers. A slurry containing 0.15 M K2S2O8 and 0.05 wt% ZrO2 had a polishing rate of 487.9 nm/h at pH 10.

引用

页数：12

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