The Formation of Smooth Facets on Wet-Etched Patterned Sapphire Substrate

被引：7

作者：

Chen, Yu-Chung ^{[1
]}

Lin, Bo-Wen ^{[1
,2
]}

Hsu, Wen-Ching ^{[3
]}

Wu, YewChung Sermon ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Crystalwise Technol Inc, Hsinchu, Taiwan

[3] Sino Amer Silicon Prod Inc, Hsinchu, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 02期

关键词：

LIGHT-EMITTING-DIODES; NEAR-ULTRAVIOLET; OUTPUT POWER; EFFICIENCY;

D O I：

10.1149/2.004402jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, rectangle-shaped SiO2 hard masks with various orientations were employed to find various facets on wet-etched patterned sapphire substrate (PSS). Seven facets (A, B, B-1, B-2, D-1, D-2 and E) were observed after etching. The surfaces of A, B and E-facets were smooth. Their plane indexes were {13 (4) over bar7}, {10 (1) over bar4} and {12 (3) over bar5}, respectively. On the other hand, the surfaces of B-1, B-2, D-1 and D-2-facets were not smooth, with some ambiguous stripes, which were investigated by using "zigzag triangle" hard mask. A large triangle-mask was employed to investigate smooth facets and the GaN epitaxial behavior. It was found that most of the growth of zincblende GaN was initiated not from A and B-facets but E-facets. (C) 2013 The Electrochemical Society. All rights reserved.

引用

页码：R5 / R8

页数：4

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