A 5 GHz low noise amplifier on 0.35 μm BiCMOS SiGe

被引：0

作者：

Plessas, F ^{[1
]}

Kalivas, G ^{[1
]}

机构：

[1] Univ Patras, Dept Elect & Comp Engn, Appl Elect Lab, Patras, Greece

来源：

ICECS 2003: PROCEEDINGS OF THE 2003 10TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-3 | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The Low Noise Amplifier (LNA) presented in this work offers a gain of 20 dB, a noise figure of 1.6 dB, with an input referred third-order intercept point of -4.5 dBm and a 1 dB compression point of -16 dBm at 5.2 GHz, using 0.35 mum BiCMOS SiGe. It operates on 5 V and requires 10 mA. The output and the input of the amplifier are matched internally to 50 Omega. The amplifier includes an image reject filter, an adaptive bias network, an RLC tank and input / output balun transformers. The image reject filter attenuates the image signal by providing low impedance at that frequency and is tuned by voltage control. An adaptive bias network is used, which allows the user to select the bias current in an adaptive manner, depending upon the requirements of the individual system. (Low NF, high gain, low consumption etc.)

引用

页码：1082 / 1085

页数：4

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