Thin-film electroluminescent device physics modeling

被引：34

作者：

Hitt, JC ^{[1
]}

Bender, JP ^{[1
]}

Wager, JF ^{[1
]}

机构：

[1] Oregon State Univ, Ctr Adv Mat Res, Dept Elect & Comp Engn, Corvallis, OR 97331 USA

来源：

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 2000年 / 25卷 / 01期

关键词：

D O I：

10.1080/10408430091149178

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Previous and current approaches to alternating current thin-film electroluminescent (ACTFEL) device physics modeling are reviewed. The primary goal of the modeling efforts of interest to this review is to accurately simulate the electrical properties of two-terminal ACTFEL test structures when subjected to realistic applied voltage waveforms, A comprehensive review of previous ACTFEL modeling efforts is presented. Additionally, two modeling methodologies that are believed to hold the most promise for accurate ACTFEL device modeling are presented. These methodologies involve state-space simulation of a discretized phosphor and SPICE simulation.

引用

页码：29 / 85

页数：57

共 50 条

[21] ZnO transparent thin-film transistor device physics
Wager, JF
ZINC OXIDE - A MATERIAL FOR MICRO- AND OPTOELECTRONIC APPLICATIONS, 2005, 194 : 217 - 224
[22] NEW TYPE OF THIN-FILM ELECTROLUMINESCENT DEVICE HAVING A MULTILAYER STRUCTURE
SUYAMA, T
OKAMOTO, K
HAMAKAWA, Y
APPLIED PHYSICS LETTERS, 1982, 41 (05) : 462 - 464
[23] A THIN-FILM ELECTROLUMINESCENT DEVICE USING A CONVENTIONAL DIELECTRIC CERAMICS SHEET
MINAMI, T
ORITO, S
NANTO, H
TAKATA, S
PROCEEDINGS OF THE SID, 1988, 29 (01): : 83 - 86
[24] Selection of dielectrics for alternating-current thin-film electroluminescent device
Krasnov, AN
THIN SOLID FILMS, 1999, 347 (1-2) : 1 - 13
[25] ELECTRICAL AND OPTICAL CHARACTERISTICS OF THIN-FILM ELECTROLUMINESCENT DEVICES AND DEVICE MODELS
SMITH, DH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1850 - 1851
[26] LOW-THRESHOLD-VOLTAGE AC THIN-FILM ELECTROLUMINESCENT DEVICE
OKAMOTO, K
NASU, Y
OKUYAMA, M
HAMAKAWA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 215 - 220
[27] AN EPITAXIAL THIN-FILM ZNS-MN DC ELECTROLUMINESCENT DEVICE
JONES, APC
BRINKMAN, AW
RUSSELL, GJ
WOODS, J
WRIGHT, PJ
COCKAYNE, B
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (09) : 621 - 624
[28] Modeling of thin-film transistor device characteristics based on fundamental charge transport physics
Wang, Xiao
Dodabalapur, Ananth
JOURNAL OF APPLIED PHYSICS, 2022, 132 (04)
[29] THIN-FILM TRANSISTOR SWITCHING OF THIN-FILM ELECTROLUMINESCENT DISPLAY ELEMENTS
KUN, ZK
LUO, FC
MURPHY, J
PROCEEDINGS OF THE SID, 1980, 21 (02): : 85 - 91
[30] A NEW THIN-FILM ELECTROLUMINESCENT DEVICE WITH LAMINATED ACTIVE FILM MADE BY LASER DEPOSITION
HERRMANN, R
MUELLER, GO
SELLE, B
ACTA POLYTECHNICA SCANDINAVICA-APPLIED PHYSICS SERIES, 1990, (170): : 171 - 179

← 1 2 3 4 5 →