Thin-film electroluminescent device physics modeling

被引：34

作者：

Hitt, JC ^{[1
]}

Bender, JP ^{[1
]}

Wager, JF ^{[1
]}

机构：

[1] Oregon State Univ, Ctr Adv Mat Res, Dept Elect & Comp Engn, Corvallis, OR 97331 USA

来源：

CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 2000年 / 25卷 / 01期

关键词：

D O I：

10.1080/10408430091149178

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Previous and current approaches to alternating current thin-film electroluminescent (ACTFEL) device physics modeling are reviewed. The primary goal of the modeling efforts of interest to this review is to accurately simulate the electrical properties of two-terminal ACTFEL test structures when subjected to realistic applied voltage waveforms, A comprehensive review of previous ACTFEL modeling efforts is presented. Additionally, two modeling methodologies that are believed to hold the most promise for accurate ACTFEL device modeling are presented. These methodologies involve state-space simulation of a discretized phosphor and SPICE simulation.

引用

页码：29 / 85

页数：57

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