Excitation of Er3+ emission in Er, Yb codoped thin silica films

被引：11

作者：

Kozanecki, A ^{[1
]}

Sealy, BJ ^{[1
]}

Homewood, K ^{[1
]}

机构：

[1] Univ Surrey, Surrey Ctr Res Ion Beam Applicat, Guildford GU2 5XH, Surrey, England

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2000年 / 300卷

基金：

英国工程与自然科学研究理事会;

关键词：

amorphous materials; optical properties; luminescence;

D O I：

10.1016/S0925-8388(99)00713-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Effects of Yb codoping on photoluminescence of Er3+ ions at room temperature in SiO2 films thermally grown on silicon are investigated. We demonstrate that for an excitation wavelength of 488 nm Yb ions act as efficient sensitizers of the I-4(13/2)-I-4(15/2) emission of Er3+ ions. We have found that for the tired dose of Yb the Er3+ intensity is directly proportional to the Er concentration. Models of the mechanisms responsible for sensitization are discussed. It is shown that the Yb/Er concentration ratio of 0.5-2 is optimum for the dopant densities of 2-4x10(20) cm(-3). (C) 2000 Elsevier Science S.A. Ail rights reserved.

引用

页码：61 / 64

页数：4

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