Chemical vapor deposition of zirconium oxide on aerosolized silicon nanoparticles

被引:9
|
作者
Nienow, Amanda M. [1 ]
Roberts, Jeffrey T. [1 ]
机构
[1] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA
关键词
D O I
10.1021/cm060883e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanoscale shells of ZrO2 were deposited onto size- selected, aerosolized Si nanoparticles by chemical vapor deposition ( CVD). The CVD precursor was nitronium pentanitratozirconate ( ZN, [ NO2][ Zr( NO3) 5]), which has been used previously to deposit ZrO2 films on silicon wafers. Silicon nanocrystals were synthesized from silane in a low- pressure nonthermal plasma and were directly extracted from the plasma growth chamber into an atmospheric- pressure aerosol flow tube reactor. The particle streams flowed first through a preheating furnace, which could be set between room temperature and 1000 degrees C, and then through a differential mobility diameter ( DMA) that was set to transmit particles having a mobility diameter of 12 nm. After size selection, ZN was mixed into the carrier gas stream, and the resulting nanocrystal/ ZN/ carrier gas mixtures passed through a heated reaction zone ( T approximate to 100 degrees C), where deposition took place. The residence time in the reaction zone was approximately 8 s. The extent of deposition was determined by measuring the size distribution function of the postreaction aerosol with a second DMA. Particles were also analyzed by transmission electron microscopy ( TEM). The measured changes in peak particle mobility diameter imply that at low- to- moderate ZN partial pressures (< 100 Pa), the deposition rate is first- order in ZN partial pressure. At higher partial pressures, the rate increases more slowly with increasing ZN pressure. Possible reasons for these behaviors are discussed. The deposition rate increases with particle preheating temperature; the rate of particles that were preheated to 500 C is roughly twice that of particles that are not preheated. This behavior is attributed to desorption of hydrogen from the particle surface leading to a more reactive substrate for CVD. We believe that these results are among the first in which CVD is used to coat size- selected, aerosolized nanoparticles and also among the first in which tandem differential mobility analysis ( TDMA) is used to measure the rate of a CVD reaction.
引用
收藏
页码:5571 / 5577
页数:7
相关论文
共 50 条
  • [41] MECHANISMS OF CHEMICAL VAPOR-DEPOSITION OF SILICON
    NISHIZAWA, J
    NIHIRA, H
    JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 82 - 89
  • [42] MECHANISM OF CHEMICAL VAPOR-DEPOSITION OF SILICON
    NISHIZAWA, J
    SAITO, M
    JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 213 - 218
  • [43] Tip Based Chemical Vapor Deposition of Silicon
    Tabib-Azar, Massood
    Yuan, Wen
    2010 IEEE SENSORS, 2010, : 2235 - 2238
  • [44] Multiscale modeling of chemical vapor deposition of silicon
    Cheimarios, Nikolaos
    Garnelis, Sokratis
    Kokkoris, George
    Boudouvis, Andreas G.
    21ST EUROPEAN SYMPOSIUM ON COMPUTER AIDED PROCESS ENGINEERING, 2011, 29 : 131 - 135
  • [45] Thermodynamic Theory of Silicon Chemical Vapor Deposition
    Tomasini, Pierre
    CHEMISTRY OF MATERIALS, 2021, 33 (06) : 2147 - 2154
  • [46] Chemical vapor deposition of silicon thin films
    Schropp, REI
    CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2002, 6 (05): : 423 - 424
  • [47] PHOTOINDUCED CHEMICAL VAPOR-DEPOSITION OF SILICON-OXIDE THIN-FILMS
    GONZALEZ, P
    FERNANDEZ, D
    POU, J
    GARCIA, E
    SERRA, J
    LEON, B
    PEREZAMOR, M
    THIN SOLID FILMS, 1992, 218 (1-2) : 170 - 181
  • [48] Effect of pressure on plasma-assisted chemical vapor deposition of silicon oxide(s)
    Banerjee, Aditi
    DebRoy, Tarasankar
    Journal of the American Ceramic Society, 1994, 77 (05): : 1366 - 1368
  • [49] Interface control in the metalorganic chemical vapor deposition (MOCVD) of titanium oxide on silicon.
    Yoon, MY
    Tuan, AC
    Medvedev, VK
    Rogers, JW
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U515 - U516
  • [50] Lateral growth of monocrystalline Ge on silicon oxide by ultrahigh vacuum chemical vapor deposition
    Cammilleri, V. D.
    Yam, V.
    Fossard, F.
    Renard, C.
    Bouchier, D.
    Zheng, Y.
    Fazzini, P. F.
    Houdellier, F.
    Hytch, M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2008, 11 (5-6) : 214 - 216