Proposal of μ-Poly Si Film Structure with High Photo-Sensitive PIN-Diode for Advanced FPD

被引：0

作者：

Sugihara, Kouya ^{[1
]}

Chinen, Satoshi ^{[1
]}

Goga, Haruya

Shirai, Katsuya ^{[1
]}

Okada, Tatsuya ^{[1
]}

Noguchi, Takashi ^{[1
]}

机构：

[1] Univ Ryukyus, Factory Engn, 1 Senbaru, Nishihara, Okinawa 9030213, Japan

来源：

IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2 | 2012年 / 19卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new structure for PIN-diode using p-poly Si film is proposed. After hydrogenation of p-poly Si film formed by Blue Multi Diode Laser Annealing (BLDA), remarkable photo-conductivity appeared. By optimizing the layer structure, the photo-conductivity in red region was enhanced. The newly proposed micro-grain structure formed by BLDA is expected to be applied to AM-OLED on flexible panel.

引用

页码：929 / 931

页数：3

共 6 条

[1]

Han S. Y., 2012, P SID2012, P330

[2]

Mugiraneza J. D., 2011, P AMFPD, P275

[3]

Mukae T., 2012, P IMID 12

[4] Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing [J].

Noguchi, Takashi ;

Chen, Yi ;

Miyahira, Tomoyuki ;

Mugiraneza, Jean de Dieu ;

Ogino, Yoshiaki ;

Iida, Yasuhiro ;

Sahota, Eiji ;

Terao, Motoyasu .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (03)

[5] Crystallization of Si Thin Film on Flexible Plastic Substrate by Blue Multi-Laser Diode Annealing [J].

Okada, Tatsuya ;

Mugiraneza, Jean de Dieu ;

Shirai, Katsuya ;

Suzuki, Toshiharu ;

Noguchi, Takashi ;

Matsushima, Hideki ;

Hashimoto, Takao ;

Ogino, Yoshiaki ;

Sahota, Eiji .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (03)

[6] Crystallization Behavior of Sputtered Amorphous Silicon Films by Blue-Multi-Laser-Diode Annealing [J].

Shirai, Katsuya ;

Mugiraneza, Jean de Dieu ;

Suzuki, Toshiharu ;

Okada, Tatsuya ;

Noguchi, Takashi ;

Matsushima, Hideki ;

Hashimoto, Takao ;

Ogino, Yoshiaki ;

Sahota, Eiji .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (02)

← 1 →