The Properties and Structure Relationship of Half Metallic Magnetic Materials on GaAs

被引:3
作者
Hassan, Sameh S. A. [1 ,2 ]
Xu, Yongbing [1 ]
Wu, Jing [3 ]
Zheng, Jian-Guo [4 ]
Huang, Jianyu Y. [5 ]
Huang, Yizhong [6 ]
Damsgaard, Christian D. [7 ]
Hansen, Jorn B. [7 ]
Jacobsen, Claus S. [7 ]
机构
[1] Univ York, Dept Elect, Spintron & Nanodevice Lab, York YO10 5DD, N Yorkshire, England
[2] Natl Res Ctr, Dept Solid State Phys, Cairo, Egypt
[3] Univ York, Dept Phys, York YO10 5DD, N Yorkshire, England
[4] Univ Calif Irvine, LEXI Calit2, Ctr Mat Characterizat, Irvine, CA 92697 USA
[5] Sandia Natl Labs, Ctr Integrated Nanotechnol CINT, Albuquerque, NM 87185 USA
[6] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[7] Tech Univ Denmark, Dept Phys & Micro & Nanotechnol, DK-2800 Lyngby, Denmark
基金
英国工程与自然科学研究理事会;
关键词
Gallium arsenide (GaAs); Heusler alloys; magnetic oxides; magnetite; molecular-beam epitaxy; spintronics; ultra-thin films; HIGH-TEMPERATURE PHASE; HETEROEPITAXIAL MAGNETITE; ELECTRONIC-STRUCTURE; FE3O4; ANISOTROPY; FILMS; EVOLUTION; MOMENT;
D O I
10.1109/TMAG.2009.2024768
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the magnetic and transport properties of two promising half metallic/GaAs hybrid spintronic structures with respect to their structural features. The Co MnGa/GaAs(100) has shown a very low magnetic moment which is attributed to the columnar structure and the interface amorphous layer as from the HRTEM images. The out of plane hysteresis loops have shown a double switching which is related to the interface layer with different magnetic properties. In the Fe3O4/GaAs(100) system, the fast saturation of the magnetization indicates the low antiphase boundaries, which is supported by the HRTEM image. Furthermore, the moderate barrier height and the heavily damped processional response to the applied field pulses may be related to the interface structure.
引用
收藏
页码:4360 / 4363
页数:4
相关论文
共 38 条
[1]   Antiphase boundaries induced exchange coupling in epitaxial Fe3O4 thin films [J].
Arora, SK ;
Sofin, RGS ;
Nolan, A ;
Shvets, IV .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2005, 286 :463-467
[2]  
CHEN YZ, 2008, J APPL PHYS, V103
[3]   Magnetic and magneto-optical properties of heteroepitaxial magnetite thin films [J].
Cheng, J. ;
Sterbinsky, G. E. ;
Wessels, B. W. .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (16) :3730-3734
[4]   Direct observation of a bulklike spin moment at the Fe/GaAs(100)-4x6 interface [J].
Claydon, JS ;
Xu, YB ;
Tselepi, M ;
Bland, JAC ;
van der Laan, G .
PHYSICAL REVIEW LETTERS, 2004, 93 (03) :037206-1
[5]   Magnetism of Fe thin layers on GaAs (001) [J].
Filipe, A ;
Schuhl, A .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :4359-4361
[6]   Slater-Pauling behavior and origin of the half-metallicity of the full-Heusler alloys [J].
Galanakis, I ;
Dederichs, PH ;
Papanikolaou, N .
PHYSICAL REVIEW B, 2002, 66 (17) :1-9
[7]  
HASSAN SSA, 1935, UNPUB
[8]  
HASSAN SSA, FE3O4GAAS 100 UNPUB
[9]   Spin and orbital magnetic moments of Fe3O4 -: art. no. 077204 [J].
Huang, DJ ;
Chang, CF ;
Jeng, HT ;
Guo, GY ;
Lin, HJ ;
Wu, WB ;
Ku, HC ;
Fujimori, A ;
Takahashi, Y ;
Chen, CT .
PHYSICAL REVIEW LETTERS, 2004, 93 (07) :077204-1
[10]   PROPERTIES OF FE SINGLE-CRYSTAL FILMS GROWN ON (100)GAAS BY MOLECULAR-BEAM EPITAXY [J].
KREBS, JJ ;
JONKER, BT ;
PRINZ, GA .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2596-2599