Deuterium channeling analysis for He+-implanted 6H-SiC

Deuterium ion channeling is applied to study accumulated disorder on Si and C sublattices in 6H-SiC crystals irradiated with 50 keV He+ ions at 100 and 300 K. The relative disorder on both sublattices follows sigmoidal dependence on dose. Carbon disorder is higher at low doses, suggesting a smaller C displacement energy. Above an ion fluence of 1.0 x 10(16) He+/cm(2), more C defects can be recovered during irradiation, indicating a lower activation energy for C migration and recombination. Isochronal annealing data show that the recovery behavior on the Si and C sublattices is similar. Annealing of a buried amorphous SiC layer, produced at 100 K (2.5 x 10(16) He+/cm(2)), exhibits an epitaxial growth rate of similar to 0.154 nm/K in the temperature range 370-870 K. (C) 2000 Elsevier Science B.V. All rights reserved.