Deuterium channeling analysis for He+-implanted 6H-SiC

被引：30
作者：
Jiang, W
Thevuthasan, S
Weber, WJ
Grötzschel, R
机构：
[1] Pacific NW Lab, Richland, WA 99352 USA
[2] Rossendorf Inc, Forschungszentrum Rossendorf EV, D-01314 Dresden, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 161卷
关键词：
RBS and NRA/channeling; ion-beam-induced damage; damage recovery; 6H-SiC;
D O I：
10.1016/S0168-583X(99)00692-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Deuterium ion channeling is applied to study accumulated disorder on Si and C sublattices in 6H-SiC crystals irradiated with 50 keV He+ ions at 100 and 300 K. The relative disorder on both sublattices follows sigmoidal dependence on dose. Carbon disorder is higher at low doses, suggesting a smaller C displacement energy. Above an ion fluence of 1.0 x 10(16) He+/cm(2), more C defects can be recovered during irradiation, indicating a lower activation energy for C migration and recombination. Isochronal annealing data show that the recovery behavior on the Si and C sublattices is similar. Annealing of a buried amorphous SiC layer, produced at 100 K (2.5 x 10(16) He+/cm(2)), exhibits an epitaxial growth rate of similar to 0.154 nm/K in the temperature range 370-870 K. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：501 / 504
页数：4
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