Effects of CdS buffer layers on photoluminescence properties of Cu(In,Ga)Se2 solar cells

被引：71

作者：

Shirakata, Sho ^{[1
]}

Ohkubo, Katsuhiko ^{[1
]}

Ishii, Yasuyuki ^{[2
]}

Nakada, Tokio ^{[2
]}

机构：

[1] Ehime Univ, Dept Elect & Elect Engn, Matsuyama, Ehime 7908577, Japan

[2] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Kanagawa 2298558, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

CIGS solar cells; Chemical-bath deposition; CBD-CdS; Photoluminescence; Time-resolved photoluminescence; THIN-FILMS;

D O I：

10.1016/j.solmat.2008.11.043

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Photoluminescence (PL) have been studied on Cu(In,Ga)Se-2 (CIGS) thin films, CdS/CIGS and CIGS solar cells, to clarify the carrier recombination process. The chemical-bath deposition (CBD) of the CdS buffer layer on the CIGS thin film leads to (i) the enhancement of near-band-edge PL intensity by a factor of 2-3, (ii) change in energy of the defect-related PL and (iii) the slight change in the decay time. They are related not only to the minimization of the surface recombination but also to the modification of native defects at the Cu-poor surface of CIGS by the occupation of Cd atom at the Cu site. A donor-acceptor pair PL at low-temperature and temperature-dependent PL have been studied. They are discussed in terms of the impurity and defect levels created in the CIGS film during the CBD-CdS process. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：988 / 992

页数：5

共 50 条

[21] Influence of annealing temperature on properties of RF sputtered InxSy buffer layers in Cu(In,Ga)Se2 solar cells
Wang, Demiao
Lu, Jingping
Li, Yuandong
2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP), 2012,
[22] Cu(In,Ga)Se2 solar cells with controlled conduction band offset of window/Cu(In,Ga)Se2 layers
Minemoto, T
Hashimoto, Y
Satoh, T
Negami, T
Takakura, H
Hamakawa, Y
JOURNAL OF APPLIED PHYSICS, 2001, 89 (12) : 8327 - 8330
[23] Fabrication and study of optical properties on CdS semiconductor as buffer layer for Cu(In,Ga)Se2 thin film solar cells
Mahdiyeh Esmaeili-Zare
Mohsen Behpour
Journal of Materials Science: Materials in Electronics, 2017, 28 : 10173 - 10183
[24] Fabrication and study of optical properties on CdS semiconductor as buffer layer for Cu(In,Ga)Se2 thin film solar cells
Esmaeili-Zare, Mahdiyeh
Behpour, Mohsen
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (14) : 10173 - 10183
[25] Electrical characterization of defects in Cu(In,Ga)Se2 solar cells containing a ZnSe or a CdS buffer layer
Munzel, M
Deibel, C
Dyakonov, V
Parisi, J
Riedl, W
Karg, F
THIN SOLID FILMS, 2001, 387 (1-2) : 231 - 234
[26] Improved efficiency of Cu(In,Ga)Se2 thinfilm solar cells using a buffer layer alternative to CdS
Hamri, Y. Z.
Bourezig, Y.
Medles, M.
Ameri, M.
Toumi, K.
Ameri, I.
Al-Douri, Y.
Voon, C. H.
SOLAR ENERGY, 2019, 178 : 150 - 156
[27] Aging Effect on the Efficiency of Cu(In,Ga)Se2/CdS Solar Cells
Kim, Deok-In
Jeon, Chan-Wook
ELECTRONIC MATERIALS LETTERS, 2015, 11 (06) : 1048 - 1052
[28] Polarization photosensitivity of ZnO/CdS/Cu(In,Ga)Se2 solar cells
V. Yu. Rud’
Yu. V. Rud’
H. W. Schock
Semiconductors, 1999, 33 : 463 - 466
[29] Induced photopleochroism of ZnO/CdS/Cu(In,Ga)Se2 solar cells
Rud, VY
Rud, YV
Walter, T
Schock, HW
TERNARY AND MULTINARY COMPOUNDS, 1998, 152 : 971 - 974
[30] Aging effect on the efficiency of Cu(In,Ga)Se2/CdS solar cells
Deok-In Kim
Chan-Wook Jeon
Electronic Materials Letters, 2015, 11 : 1048 - 1052

← 1 2 3 4 5 →