Strain profiles and crystallographic defects in 6H SiC implanted with 2 MeV As ions

被引：0

作者：

Wierzchowski, Wojciech K. ^{[1
]}

Wieteska, Krzysztof ^{[2
]}

Turos, Andrzej ^{[1
,3
]}

Graeff, Walter ^{[4
]}

Groetzschel, Rainer ^{[5
]}

Stonnert, Anna ^{[3
]}

Ratajczak, Renata ^{[3
]}

机构：

[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[2] Inst Atom Energy, PL-05400 Otwock, Poland

[3] Andrzej Soltan Inst Nucl Studies, PL-05400 Otwock, Poland

[4] DESY, HASYLAB, D-22603 Hamburg, Germany

[5] Rossendorf Res Ctr, D-01314 Dresden, Germany

来源：

ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2008年 / 64卷

关键词：

silicon carbide; ion implantation; X-ray strain determination;

D O I：

10.1107/S0108767308080744

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

P17.04.08

引用

页码：C599 / C599

页数：1

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