Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

被引：19

作者：

Onishi, Yutaka ^{[1
]}

Saga, Nobuhiro ^{[2
]}

Koyama, Kenji ^{[1
]}

Doi, Hideyuki ^{[2
]}

Ishizuka, Takashi ^{[2
]}

Yamada, Takashi ^{[1
]}

Fujii, Kosuke ^{[1
]}

Mori, Hiroki ^{[2
]}

Hashimoto, Jun-ichi ^{[1
]}

Shimazu, Mitsuru ^{[2
]}

Yamaguchi, Akira ^{[2
]}

Katsuyama, Tsukuru ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Transmiss Devices R&D Labs, Yokohama, Kanagawa 2448588, Japan

[2] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 03期

关键词：

GaInNAs; long wavelength (LW); tunnel junction; vertical-cavity surface-emitting laser (VCSEL); RESISTANCE; OPERATION; INP;

D O I：

10.1109/JSTQE.2008.2011495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A long-wavelength GaInNAs vertical-cavity surface-emitting laser with a buried tunnel junction (BTJ) has been demonstrated in this paper. It has been shown that a combination of a GaAs-based BTJ for a current confinement, GaInNAs multi-quantum wells for an active region, a dielectric distributed Bragg reflector (DBR) for a top mirror, and an AlGaAs/GaAs DBR for a bottom mirror is desirable to realize high-speed operation at high temperature. The maximum output power of 4.2 mW with a low resistance of 65 Omega has been obtained at 25 degrees C. Operations of 10 Gb/s have been achieved over the temperature range of 25 degrees C-85 degrees C, with operation current of 6.9 mA and extinction ratio of 5.0 dB.

引用

页码：838 / 843

页数：6

共 20 条

[1] CALIMAN A, EUR C OPT COMM BRUSS
[2] Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm
Choquette, KD
Klem, JF
Fischer, AJ
Blum, O
Allerman, AA
Fritz, IJ
Kurtz, SR
Breiland, WG
Sieg, R
Geib, KM
Scott, JW
Naone, RL
[J]. ELECTRONICS LETTERS, 2000, 36 (16) : 1388 - 1390
[3] GRAHAM LA, 2008, P SPIE, V6908
[4] Single fundamental-mode output power exceeding 6 mW from VCSELs with a shallow surface relief
Haglund, Å
Gustavsson, JS
Vukusic, J
Modh, P
Larsson, A
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (02) : 368 - 370
[5] HOFMANN W, P INT SEM LAS C, P11
[6] JEWELL J, 2007, P INT S VCSELS INT P, V1, P8
[7] Kotaki Y., 1984, P C SOL STAT DEV MAT, P133
[8] Low-resistance tunnel junctions on GaAs substrates using GaInNAs
Mars, DE
Chang, YL
Leary, MH
Roh, SD
Chamberlin, DR
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (14) : 2560 - 2562
[9] Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD
Nishiyama, N
Caneau, C
Hall, B
Guryanov, G
Hu, MH
Liu, XS
Li, MJ
Bhat, R
Zah, CE
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2005, 11 (05) : 990 - 998
[10] ONISHI Y, P INT SEM LAS C 2008, P53

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