Charge carriers with fractional exclusion statistics in cuprates

被引:3
|
作者
Marchetti, P. A. [1 ]
Ye, F. [2 ]
Su, Z. B. [3 ]
Yu, L. [4 ,5 ,6 ]
机构
[1] Ist Nazl Fis Nucl, Dipartimento Fis & Astron, I-35131 Padua, Italy
[2] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
[3] Chinese Acad Sci, Inst Theoret Phys, Beijing 100190, Peoples R China
[4] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[5] Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[6] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
关键词
T-J MODEL; VALENCE-BOND STATE; GAUGE FIELD ACTION; EXCITATIONS; BOSONIZATION; LA2-XSRXCUO4; RESISTIVITY; INSULATOR; FERMIONS;
D O I
10.1103/PhysRevB.100.035103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that in the SU (2) x U(1) spin-charge gauge approach we developed earlier one can attribute consistently an exclusion statistics with parameter 1/2 to the spinless charge carriers of the t-J model in two dimensions, as it occurs in one dimension. Like the one-dimensional case, the no-double occupation constraint is at the origin of this fractional exclusion statistics. With this statistics we recover a large Fermi volume of holes at high dopings, close to that of the tight binding approximation. Furthermore, the composite nature of the hole, made of charge and spin carriers only weakly bounded, can provide a natural explanation of many unusual experimental features of the hole-doped cuprates.
引用
收藏
页数:11
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