Effect of low temperature thin GaN layer on ZnO film grown on nitridated c-sapphire by molecular beam epitaxy

被引：2

作者：

Wang, XQ

Tomita, Y

Roh, OH

Ishitani, Y

Yoshikawa, A

机构：

[1] Chiba Univ, Ctr Frontier Elect & Photon, Inage Ku, Chiba 2638522, Japan

[2] Chiba Univ, Dept Elect & Mech Engn, Inage Ku, Chiba 2638522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 6A期

关键词：

ZnO; rf-MBE; GaN; surface morphology; polarity;

D O I：

10.1143/JJAP.43.L719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A low-temperature thin GaN layer was used to wet the grown ZnO buffer layer effectively in the epitaxy of a ZnO film on a nitridated c-sapphire substrate by plasma-assisted molecular beam epitaxy. An atomically smooth Zn-polar ZnO epilayer was achieved with an rms roughness of 0.13 nm in a 3 mum x 3 mum scanned area. Triangular terraces with monolayer steps (0.26 nm) were observed by atomic force microscope. The crystalline quality of the ZnO epilayer was also improved with the full width at half maximum (FWHM) values for (002) and (102) omega-scans of 41 arcsec and 378 arcsec, respectively.

引用

收藏

页码：L719 / L721

页数：3

相关论文

共 12 条

[1] Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer [J].

Chen, YF ;

Ko, HJ ;

Hong, SK ;

Yao, T .

APPLIED PHYSICS LETTERS, 2000, 76 (05) :559-561

[2] Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire [J].

Choopun, S ;

Vispute, RD ;

Noch, W ;

Balsamo, A ;

Sharma, RP ;

Venkatesan, T ;

Iliadis, A ;

Look, DC .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :3947-3949

[3] Novel stabilization mechanism on polar surfaces: ZnO(0001)-Zn [J].

Dulub, O ;

Diebold, U ;

Kresse, G .

PHYSICAL REVIEW LETTERS, 2003, 90 (01) :4-016102

[4] STM study of the geometric and electronic structure of ZnO(0001)-Zn, (000(1)over-bar)-O, (10(1)over-bar0), and (11(2)over-bar0) surfaces [J].

Dulub, O ;

Boatner, LA ;

Diebold, U .

SURFACE SCIENCE, 2002, 519 (03) :201-217

[5] Control of polarity of ZnO films grown by plasma-assisted molecular-beam epitaxy: Zn- and O-polar ZnO films on Ga-polar GaN templates [J].

Hong, SK ;

Hanada, T ;

Ko, HJ ;

Chen, Y ;

Yao, T ;

Imai, D ;

Araki, K ;

Shinohara, M .

APPLIED PHYSICS LETTERS, 2000, 77 (22) :3571-3573

[6] Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy [J].

Ko, HJ ;

Chen, YF ;

Yao, T ;

Miyajima, K ;

Yamamoto, A ;

Goto, T .

APPLIED PHYSICS LETTERS, 2000, 77 (04) :537-539

[7] Recent advances in ZnO materials and devices [J].

Look, DC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387

[8] Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer [J].

Tsukazaki, A ;

Ohtomo, A ;

Yoshida, S ;

Kawasaki, M ;

Chia, CH ;

Makino, T ;

Segawa, Y ;

Koida, T ;

Chichibu, SF ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2784-2786

[9] Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices [J].

Vispute, RD ;

Talyansky, V ;

Choopun, S ;

Sharma, RP ;

Venkatesan, T ;

He, M ;

Tang, X ;

Halpern, JB ;

Spencer, MG ;

Li, YX ;

Salamanca-Riba, LG ;

Iliadis, AA ;

Jones, KA .

APPLIED PHYSICS LETTERS, 1998, 73 (03) :348-350

[10] Molecular beam epitaxy growth of single-domain and high-quality ZnO layers on Nitrided (0001) sapphire surface [J].

Wang, XQ ;

Iwaki, H ;

Murakami, M ;

Du, XL ;

Ishitani, Y ;

Yoshikawa, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (2A) :L99-L101