Hot-Probe method for evaluation of impurities concentration in semiconductors

被引：122

作者：

Golan, G. ^{[1
]}

Axelevitch, A. ^{[1
]}

Gorenstein, B. ^{[1
]}

Manevych, V. ^{[1
]}

机构：

[1] Holon Acad Inst Technol, Holon, Israel

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 09期

关键词：

Hot-Probe method; charged carriers concentration; type of charged carriers; semiconductors film properties;

D O I：

10.1016/j.mejo.2006.01.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical, optical, and mechanical properties of thin films significantly differ from those of bulk materials. Therefore, characterization methods for evaluation of thin film properties became highly important. A novel approach to the well known "Hot-Probe" method is proposed and applied in our work. The conventional Hot Probe characterization method enables only the definition of a semiconductor type, P or N, by identifying the majority charged carriers. According to the new Hot Probe technique, one can measure and calculate the majority charged carriers concentration and its dynamic parameters. Feasibility proof of the upgraded Hot Probe method was done in Si and Ge bulk, and in thin film semiconductor samples. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：910 / 915

页数：6