Mechanisms of the Asymmetric Light Output Enhancements in a-Plane GaN Light-Emitting Diodes With Photonic Crystals

被引：0
作者：
Li, Hsiang-Wei [1 ]
Yin, Yu-Feng [1 ]
Chang, Chen-Yu [1 ]
Tsai, Chen-Hung [1 ]
Hsu, Yen-Hsiang [1 ]
Lin, Da-Wei [2 ]
Wu, Yuh-Renn [1 ]
Kuo, Hao-Chung [2 ]
Huang, Jian Jang [1 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2014年 / 50卷 / 12期
关键词：
Light-emitting diodes; non-polar GaN; photonic crystal; purcell effect; EXTRACTION; NONPOLAR; POLAR;
D O I：
10.1109/JQE.2014.2362552
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The unique properties of nonpolar GaN light-emitting diodes (LEDs) have the advantages of generating polarized light emission. The employment of asymmetric 2-D photonic crystals (PhCs) can further enhance the light polarization ratio. In addition, it was generally recognized that the Purcell effect can increase the internal quantum efficiency of the LEDs with PhCs. In this paper, we study the properties of optical modes from different crystal planes. The Purcell effect is analyzed based on the PhCs and material crystal orientations. With different transition probability of the polarized photons in valence bands, the corresponding Purcell effect enhancement on the quantum efficiency varies.
引用
收藏
页码：951 / 956
页数：6
相关论文
共 20 条
  • [1] Spontaneous emission extraction and Purcell enhancement from thin-film 2-D photonic crystals
    Boroditsky, M
    Vrijen, R
    Krauss, TF
    Coccioli, R
    Bhat, R
    Yablonovitch, E
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1999, 17 (11) : 2096 - 2112
  • [2] Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
    Brinkley, Stuart E.
    Lin, You-Da
    Chakraborty, Arpan
    Pfaff, Nathan
    Cohen, Daniel
    Speck, James S.
    Nakamura, Shuji
    DenBaars, Steven P.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (01)
  • [3] Excitation power dependence of the Purcell effect in photonic crystal microcavity lasers with quantum wires
    Canet-Ferrer, J.
    Prieto, I.
    Munoz-Matutano, G.
    Martinez, L. J.
    Munoz-Camuniez, L. E.
    Llorens, J. M.
    Fuster, D.
    Alen, B.
    Gonzalez, Y.
    Gonzalez, L.
    Postigo, P. A.
    Martinez-Pastor, J. P.
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (20)
  • [4] Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions
    Chiu, C. H.
    Kuo, S. Y.
    Lo, M. H.
    Ke, C. C.
    Wang, T. C.
    Lee, Y. T.
    Kuo, H. C.
    Lu, T. C.
    Wang, S. C.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
  • [5] Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
    Feezell, Daniel F.
    Schmidt, Mathew C.
    DenBaars, Steven P.
    Nakamura, Shuji
    [J]. MRS BULLETIN, 2009, 34 (05) : 318 - 323
  • [6] Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes
    Gardner, NF
    Kim, JC
    Wierer, JJ
    Shen, YC
    Krames, MR
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (11) : 1 - 3
  • [7] Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes
    Huang, Hung-Hsun
    Wu, Yuh-Renn
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)
  • [8] Ko T. S., 2007, APPL PHYS LETT, V90
  • [9] Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting
    Masui, Hisashi
    Yamada, Hisashi
    Iso, Kenji
    Speck, James S.
    Nakamura, Shuji
    DenBaars, Steven P.
    [J]. JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2008, 16 (04) : 571 - 578
  • [10] Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
    Masui, Hisashi
    Nakamura, Shuji
    DenBaars, Steven P.
    Mishra, Umesh K.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) : 88 - 100
12