Intrawell and interwell magnetoexcitons in InxGa1-xAs/GaAs coupled double quantum wells

被引：52

作者：

Dzyubenko, AB ^{[1
]}

Yablonskii, AL ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST GEN PHYS,MOSCOW 117942,RUSSIA

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.53.16355

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We theoretically study the ground and many of the excited optically active s states of spatially direct (intrawell) and indirect (interwell) quasi-two-dimensional excitons in InxGa1-xAs/GaAs coupled double quantum wells (DQW's) in quantizing magnetic fields B > 2 T. The evolution of the eigenstates and oscillator strengths with the perpendicular magnetic B and electric E fields (when in particular, the direct-indirect crossover and a number of anticrossings occur in the spectra) is studied. The results of the theory are in good agreement with the recently obtained experimental data [L. V. Butov, A. Zrenner, G. Abstreiter, A. V. Petinova and K. Eberl, Phys. Rev. B 52, 12 153 (1995)]. The physical origin of the excitonic symmetric-antisymmetric splittings Delta(x) in DQW's is discussed. It is shown that, in the wide-barrier regime. Is Delta(x) determined by the two-particle tunneling through the barrier and suppressed by the excitonic effects.

引用

页码：16355 / 16364

页数：10

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