Structural characterization of PZT thin films and related properties

被引：0
|
作者：
Badèche, T
Gagou, Y
Aliouane, N
Aktsipetrov, OA
Pischedda, MH
Saint-Grégoire, P
机构：
[1] Univ Toulon & Var, UMR CNRS, L2MP, F-83957 La Garde, France
[2] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia
来源：
FERROELECTRICS | 2001年 / 254卷 / 1-4期
关键词：
PZT; domains; ferroelectric thin films;
D O I：
10.1080/00150190108215019
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This work is devoted to PZT thin films obtained by spin coating technique. The effect of temperature annealing on the morphology of thin films is studied by means of SEM, HREM and XRD. Thin films, originally amorphous, present after annealing a random orientation with regard to the substrate. Taking into account the poor adherence on the substrate, a new mechanism for fatigue involving the role of domain walls, is proposed.
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收藏
页码：403 / 410
页数：8
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