Undoped ZnO abundant with metal vacancies

被引：176

作者：

Pan, Lun ^{[1
]}

Wang, Songbo ^{[1
]}

Mi, Wenbo ^{[2
]}

Song, Jiajia ^{[1
]}

Zou, Ji-Jun ^{[1
,3
]}

Wang, Li ^{[1
,3
]}

Zhang, Xiangwen ^{[1
,3
]}

机构：

[1] Tianjin Univ, Sch Chem Engn & Technol, Key Lab Green Chem Technol, Minist Educ, Tianjin 300072, Peoples R China

[2] Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R China

[3] Collaborat Innovat Ctr Chem Sci & Engn, Tianjin 300072, Peoples R China

来源：

NANO ENERGY | 2014年 / 9卷

基金：

中国国家自然科学基金;

关键词：

ZnO; Zn vacancy; p-Type conductivity; Room-temperature ferromagnetism; Photocatalysis; OXIDE NANOWIRE ARRAYS; ZINC-OXIDE; DOPED ZNO; TEMPERATURE FERROMAGNETISM; MAGNETIC SEMICONDUCTORS; ROOM-TEMPERATURE; VISIBLE-LIGHT; SOLAR-CELLS; PHOTOCATALYSTS; NANOPARTICLES;

D O I：

10.1016/j.nanoen.2014.06.029

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Abundant Zn vacancies (7.5 mol%) were successfully introduced into undoped ZnO by a simple solvothermal method followed with thermal calcination, and undoubtedly proved by both characterizations and computations. The presence of Zn vacancies led to some new properties in ZnO, such as p-type conductivity, room-temperature ferromagnetism and high photocatalytic activity. The formation process of abundant Zn vacancies during the synthesis of ZnO was also discussed. This work demonstrates that metal defects can be easily engineered in undoped metal oxides, which may trigger many unexpected behaviors and thus widen the synthetic approach and application of functional materials in energy fields. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：71 / 79

页数：9

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