Transient photocurrent response of a-Si:H based three-color nipin detector

被引：14

作者：

Stiebig, H

Ulrichs, C

Kulessa, T

Folsch, J

Finger, F

Wagner, H

机构：

[1] Forschungszentrum Jülich GmbH, ISI-PV

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 198卷

关键词：

D O I：

10.1016/0022-3093(96)00110-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bandgap and defect engineered amorphous silicon based nipin photo diodes can be used as color detectors. Changing the applied voltage from -1.5 V to -0.6 V and 1.0 V shifts the responsivity from red, to green, to blue, respectively. Wavelength dependent voltage switching and switching-on the illumination experiments are carried out to investigate the transient behavior and to determine the frame rate for color detection. While the transient response after bias switching depends on the trapped charge in the device, the transients after switching-on the light is strongly influenced by the generation profile.

引用

页码：1185 / 1188

页数：4