Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

被引:801
|
作者
Ruppert, Claudia
Aslan, Ozgur Burak
Heinz, Tony F. [1 ]
机构
[1] Columbia Univ, Dept Phys, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
Layered materials; transition metal dichalcogenides; 2D materials; MoTe2; electronic and optical properties; TRANSITION-METAL DICHALCOGENIDES; ELECTRONIC-STRUCTURE; RAMAN-SCATTERING; MONOLAYER; IDENTIFICATION; TRANSISTORS; SPECTRUM; STRAIN; MOSE2; MODE;
D O I
10.1021/nl502557g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1.10 eV. This new monolayer material extends the spectral range of atomically thin direct-gap materials from the visible to the near-infrared.
引用
收藏
页码:6231 / 6236
页数:6
相关论文
共 50 条
  • [1] Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe2
    Lezama, Ignacio Gutierrez
    Arora, Ashish
    Ubaldini, Alberto
    Barreteau, Celine
    Giannini, Enrico
    Potemski, Marek
    Morpurgo, Alberto F.
    NANO LETTERS, 2015, 15 (04) : 2336 - 2342
  • [2] Photoconductivity Multiplication in Semiconducting Few-Layer MoTe2
    Zheng, Wenhao
    Bonn, Mischa
    Wang, Hai, I
    NANO LETTERS, 2020, 20 (08) : 5807 - 5813
  • [3] Tunable Lattice Constant and Band Gap of Single- and Few-Layer ZnO
    Lee, Junseok
    Sorescu, Dan C.
    Deng, Xingyi
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2016, 7 (07): : 1335 - 1340
  • [4] High temperature Raman investigation of few-layer MoTe2
    Zhang, Hongguang
    Zhou, Wei
    Li, Xuefei
    Xu, Jun
    Shi, Yi
    Wang, Baigeng
    Miao, Feng
    APPLIED PHYSICS LETTERS, 2016, 108 (09)
  • [5] Reducing the Schottky barrier between few-layer MoTe2 and gold
    Qi, Dianyu
    Wang, Qixing
    Han, Cheng
    Jiang, Jizhou
    Zheng, Yujie
    Chen, Wei
    Zhang, Wenjing
    Wee, Andrew Thye Shen
    2D MATERIALS, 2017, 4 (04):
  • [6] FEW-LAYER MoTe2 SUSPENDED CHANNEL TRANSISTORS AND NANOELECTROMECHANICAL RESONATORS
    Liu, Xia
    Islam, Arnob
    Feng, Philip X-L
    2019 20TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS & EUROSENSORS XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019, : 2408 - 2411
  • [7] Fast High-Responsivity Few-Layer MoTe2 Photodetectors
    Octon, Tobias J.
    Nagareddy, V. Karthik
    Russo, Saverio
    Craciun, Monica F.
    Wright, C. David
    ADVANCED OPTICAL MATERIALS, 2016, 4 (11): : 1750 - 1754
  • [8] Gate and Temperature Driven Phase Transitions in Few-Layer MoTe2
    Kowalczyk, Hugo
    Biscaras, Johan
    Pistawala, Nashra
    Harnagea, Luminita
    Singh, Surjeet
    Shukla, Abhay
    ACS NANO, 2023, 17 (07) : 6708 - 6718
  • [9] Double resonance Raman modes in monolayer and few-layer MoTe2
    Guo, Huaihong
    Yang, Teng
    Yamamoto, Mahito
    Zhou, Lin
    Ishikawa, Ryo
    Ueno, Keiji
    Tsukagoshi, Kazuhito
    Zhang, Zhidong
    Dresselhaus, Mildred S.
    Saito, Riichiro
    PHYSICAL REVIEW B, 2015, 91 (20)