Design and fabrication of a millimeter-wave MMIC HBT VCO with consideration for modulation linearity and low phase noise

被引:0
作者
Kaneko, T [1 ]
Tanji, K
Amamiya, Y
Niwa, T
Shimawaki, H
Tanaka, S
Wada, K
机构
[1] NEC Amer Inc, Radio Commun Syst Div, Hillsboro, OR USA
[2] NEC Fukushima Ltd, Dev Dept 1, Fukushima, Japan
[3] NEC Corp Ltd, Optoelect & High Frequency Dev Res Labs, Tokyo, Japan
[4] NEC Corp Ltd, ULSI Device Dev Lab, Tokyo, Japan
来源
NEC RESEARCH & DEVELOPMENT | 2000年 / 41卷 / 01期
关键词
millimeter-wave; HBT (Hetero Bipolar Transistor); MMIC (Monolithic Microwave Integrated Circuit); VCO (Voltage Controlled Oscillator); 1/f noise; phase noise; varactor; resonator;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 38GHz-band MMIC (Monolithic Microwave Integrated Circuit) VCO (Voltage Controlled Oscillator) has been developed for the millimeter wave radio communications systems, using the AlGaAs/InGaAs HBT (Hetero Bipolar Transistor). There are the p(+)/p re-grown base contact and several other technologies in fabrication process of HBT used for realizing low 1/f noise of the oscillation transistor. Furthermore, unique circuit technology to maximize the quality-factor of a resonator and a base-collector junction diode p-n varactor are designed for the low phase noise characteristics and the linear frequency modulation characteristics. The MMIC HBT VCO exhibit a phase noise of 85dBc/Hz at 100KHz off the carrier and a frequency modulation linearity of less than 3.6%p-p with the maximum frequency deviation of 37.5MHz at 38GHz band.
引用
收藏
页码:44 / 48
页数:5
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