A novel "SMAFTI" package for inter-chip wide-band data transfer

被引：22

作者：

Kurita, Yoichiro ^{[1
]}

Soejima, Koji ^{[1
]}

Kikuchi, Katsumi ^{[2
]}

Takahashi, Masatake ^{[2
]}

Tago, Masamoto ^{[2
]}

Koike, Masahiro ^{[1
]}

机构：

[1] NEC Elect Corp, 1120 Shimokuzawa, Sagamihara, Kanagawa 2291198, Japan

[2] NEC Corp Ltd, Sagamihara, Kanagawa 2291198, Japan

来源：

56TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE 2006, VOL 1 AND 2, PROCEEDINGS | 2006年

关键词：

D O I：

10.1109/ECTC.2006.1645661

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A package structure with inter-chip connection is proposed for broadband data transfer and low latency electrical communication between a high-capacity memory and a logic device interconnected by a feedthrough interposer (FTI) featuring a fine-wiring pattern and ultra-fine-pitch through vias. The FTI is formed on a silicon wafer using a photolithography process to realize fine vias and fine wiring patterns. This structure enables over a thousand inter-chip connections and a high pin count in the logic device. This paper describes the concept, structure, process, and experimental results of prototypes of this package called SMAFTI (SMArt chip connection with FeedThrough Interposer). This paper also reports the results of intermetallic compound analysis and thermal cycle test (TCT) that were performed to confirm the fundamental reliability of this novel inter-chip connection structure.

引用

页码：289 / +

页数：2