Effects of annealing condition on orientation of Bi3.2Nd0.8Ti3O12 ferroelectric film prepared by chemical solution deposition process

Bi3.2Nd0.8Ti3O12 Ferroelectric thin film was successfully prepared on p-Si(111) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing condition were studied. XRD analysis indicated that (200)-oriented films with degree of orientation of 1(200)/I(117)=2.097 and 0.466 were obtained by preannealing at 400 oC for 10 min followed by rapid thermal annealing at 700 oC for 3 min and 10 min, respectively, (008)oriented film with degree of orientation of 1(008)/I(117)=1.706 which decreased as increase of annealing time were obtained by rapid thermal annealing at 700 oC 3 min without preannealing, and (008)-oriented film with degree of orientation of 1(008)/I(117)=0.719 were obtained by preheating the film from room temperature at 20 oC/min followed by annealing at 700 oC for 10 min. AFM analysis further indicated that preannealing at 400 oC for 10 min followed by rapid thermal annealing at 700 oC for 3 min resulted in formation of platelike crystallite parallel to substrate surface, however rapid thermal annealing at 700 oC 3 min without preannealing resulted in columnar crystallite perpendicular to substrate surface.