High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Vth Tunability

被引：54

作者：

Kim, Sang-Hyeon ^{[1
]}

Yokoyama, Masafumi ^{[1
]}

Nakane, Ryosho ^{[1
]}

Ichikawa, Osamu ^{[2
]}

Osada, Takenori ^{[2
]}

Hata, Masahiko ^{[2
]}

Takenaka, Mitsuru ^{[1
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo 113003, Japan

[2] Sumitomo Chem Co,Ltd, Tsukuba, Ibaraki 3003294, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 05期

关键词：

Body factor; extremely thin-body (ETB) MOSFETs; InGaAs MOSFETs; metal source and drain (S/D); Ni-InGaAs S/D; tri-gate; V-th tenability; FIELD-EFFECT TRANSISTORS; ELECTRON; MOBILITY; S/D; SI;

D O I：

10.1109/TED.2014.2312546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the effects of the tri-gate channel structure on electrical properties of extremely thin-body (ETB) InAs-on-insulator (-OI) MOSFETs. It was found that the tri-gate structure provides significant improvement in short channel effect (SCE) control even in ETB-OI MOSFETs by the simulation. We have fabricated and demonstrated tri-gate InAsOI MOSFETs with fin width of the top surface down to 40 nm. The tri-gate ETB InAs-OI MOSFETs shows better SCEs control with small effective mobility (mu(eff)) reduction. Thus, we have demonstrated the operation of sub-20-nm-channel length (L-ch) InAs-OI MOSFETs. The 20-nm-L-ch InAs-OI MOSFETs show good electrostatic with subthreshold slope of 120 mV/decade and drain induced barrier lowering of 110 mV/V, and high transconductance (G(m)) of 1.64 mS/mu m. Furthermore, we have realized a wide-range threshold voltage (V-th) tunability in tri-gate InAs-OI MOSFETs through back bias voltage (V-B) control.

引用

页码：1354 / 1360

页数：7

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