Study on reaction and diffusion in the Mo-Si system by ZrO2 marker experiments

被引：31

作者：

Byun, JY

Yoon, JK

Kim, GH

Kim, JS

Choi, CS

机构：

[1] Korea Inst Sci & Technol, Met Proc Res Ctr, Seoul 136791, South Korea

[2] Korea Inst Sci & Technol, Nanomat Res Ctr, Seoul 136791, South Korea

[3] Yonsei Univ, Res Inst Iron & Steel Technol, Seoul 120749, South Korea

来源：

SCRIPTA MATERIALIA | 2002年 / 46卷 / 07期

关键词：

CVD; annealing; intermetallic compounds; diffusion; Mo silicides;

D O I：

10.1016/S1359-6462(02)00029-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The dominant diffusing element in the MoSi2, Mo5Si3 and Mo3Si was found to be Si from marker experiments using ZrO2 particles. Based on these marker experiments, the formation mechanism of the Mo5Si3 and Mo3Si layers by reaction and diffusion was also discussed. (C) 2002 Published by Elsevier Science Ltd. on behalf of Acta Materialia, Inc.

引用

页码：537 / 542

页数：6

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