Self-assembled three-dimensional ZnO nanosize islands on Si substrates with SiO2 intermediate layer by metalorganic chemical vapor deposition

被引：9

作者：

Kim, SW ^{[1
]}

Fujita, S

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

[2] Kyoto Univ, Int Innovat Ctr, Kyoto 6068501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 5B期

关键词：

ZnO; SiO2; Si substrates; nano-islands; MOCVD; self-organization;

D O I：

10.1143/JJAP.41.L543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-organized ZnO nanosize islands were successfully synthesized by metalorganic chemical vapor deposition on thermally grown SiO2 layers on Si (111). Investigation by atomic force microscopy showed that the density and size of the ZnO islands were changed by growth conditions. At the growth temperature of 500degreesC, the ZnO island density was 5.7 x 10(9) cm(-2) With the average island dimensions of 30 nm width and 10 nm height. The formation mechanism is attributed to Volmer-Weber-like nucleation which occurs due to low adhesion probability of ZnO on SiO2.

引用

页码：L543 / L545

页数：3

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