Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs

被引：10

作者：

Kalavagunta, Aditya ^{[1
]}

Mukherjee, Shubhajit ^{[2
]}

Reed, Robert ^{[2
]}

Schrimpf, R. D. ^{[2
]}

机构：

[1] Comsol Inc, Los Angeles, CA 90024 USA

[2] Vanderbilt Univ, Nashville, TN 37235 USA

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 03期

关键词：

ELECTRON; TRANSISTORS; SIMULATION; FIELD;

D O I：

10.1016/j.microrel.2013.10.018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mobility degradation due to scattering from radiation-induced defects is compared to that produced by self-heating in proton-irradiated AlGaN/GaN HEMTs using experiments and simulations. After irradiation, the mobility in the 2DEG is limited by scattering from charged traps and is temperature-limited near the gate-drain access region. (C) 2013 Elsevier Ltd. All rights reserved.

引用

收藏

页码：570 / 574

页数：5

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