Simulations of atomic deuterium exposure in self-damaged tungsten

被引:47
作者
Hodille, E. A. [1 ]
Zaloznik, A. [2 ]
Markelj, S. [2 ]
Schwarz-Selinger, T. [3 ]
Becquart, C. S. [4 ]
Bisson, R. [5 ]
Grisolia, C. [1 ]
机构
[1] CEA, IRFM, F-13108 St Paul Les Durance, France
[2] Jozef Stefan Inst, Jamova Cesta 39, Ljubljana 1000, Slovenia
[3] Max Planck Inst Plasma Phys, Boltzmannstr 2, D-85748 Garching, Germany
[4] Univ Lille 1, UMET, UMR 8207, ENSCL, F-59655 Villeneuve Dascq, France
[5] Aix Marseille Univ, CNRS, PIIM, Marseille, France
关键词
tungsten; damaged material; rate-equation modeling; deuterium atoms; fuel retention; HYDROGEN ADSORPTION; DIFFUSION; W(110); DESORPTION; RETENTION; H-2; RECOMBINATION; ABSORPTION; DYNAMICS; SURFACES;
D O I
10.1088/1741-4326/aa5aa5
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Simulations of deuterium (D) atom exposure in self-damaged polycrystalline tungsten at 500 K and 600 K are performed using an evolution of the MHIMS (migration of hydrogen isotopes in materials) code in which a model to describe the interaction of D with the surface is implemented. The surface-energy barriers for both temperatures are determined analytically with a steady-state analysis. The desorption energy per D atom from the surface is 0.69 +/- 0.02 eV at 500 K and 0.87 +/- 0.03 eV at 600 K. These values are in good agreement with ab initio calculations as well as experimental determination of desorption energies. The absorption energy (from the surface to the bulk) is 1.33 +/- 0.04 eV at 500 K, 1.55 +/- 0.02 eV at 600 K when assuming that the resurfacing energy (from the bulk to the surface) is 0.2 eV. Thermal-desorption spectrometry data after D atom exposure at 500 K and isothermal desorption at 600 K after D atom exposure at 600 K can be reproduced quantitatively with three bulk-detrapping energies, namely 1.65 +/- 0.01 eV, 1.85 +/- 0.03 eV and 2.06 +/- 0.04 eV, in addition to the intrinsic detrapping energies known for undamaged tungsten (0.85 eV and 1.00 eV). Thanks to analyses of the amount of traps during annealing at different temperatures and ab initio calculations, the 1.65 eV detrapping energy is attributed to jogged dislocations and the 1.85 eV detrapping energy is attributed to dislocation loops. Finally, the 2.06 eV detrapping energy is attributed to D trapping in cavities based on literature reporting observations on the growth of cavities, even though this could also be understood as D desorbing from the C-D bond in the case of hydrocarbon contamination in the experimental sample.
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页数:15
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