Elemental structure in Si(110)-"16x2" revealed by scanning tunneling microscopy

被引:107
作者
An, T [1 ]
Yoshimura, M [1 ]
Ono, I [1 ]
Ueda, K [1 ]
机构
[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 04期
关键词
D O I
10.1103/PhysRevB.61.3006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Atomic structures of the clean Si(110)-"16x2" surface are studied by scanning tunneling microscopy (STM). High-resolution STM images reveal that the elemental structure in the "16x2" is a pair of pentagons. In the empty-states images the elemental structure is clearly resolved in ten protrusions, while in eight in the filled-states images. In order to clarify the atomic arrangement of the pentagons, we pay attention to the disordered area where the elemental structures are isolated on the bulk-terminated surface. The bulk-terminated surface structure, on which the pentagons are located, is well understood by the rotational-relaxation structural model. In consideration of the registry of the pentagon for the rotational-relaxation structure, a "tetramer-interstitial'' model is proposed for the elemental structure, together with three other possible structural models.
引用
收藏
页码:3006 / 3011
页数:6
相关论文
共 29 条
[1]  
An T., UNPUB
[2]   The structure of silicon surfaces from (001) to (111) [J].
Baski, AA ;
Erwin, SC ;
Whitman, LJ .
SURFACE SCIENCE, 1997, 392 (1-3) :69-85
[3]   TUNNELING MICROSCOPY OF SILICON AND GERMANIUM - SI(111) 7X7, SNGE(111) 7X7, GESI(111) 5X5, SI(111) 9X9, GE(111) 2X8, GE(100) 2X1, SI(110) 5X1 [J].
BECKER, RS ;
SWARTZENTRUBER, BS ;
VICKERS, JS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02) :472-477
[4]   The structure of clean and SiGe-covered Si(110) surfaces [J].
Butz, R ;
Luth, H .
SURFACE SCIENCE, 1996, 365 (03) :807-816
[5]   (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082
[6]   NEW ELECTRONIC STATES ON CLEAN SI(110)-16X2 SURFACES [J].
CRICENTI, A ;
NESTERENKO, B ;
PERFETTI, P ;
LELAY, G ;
SEBENNE, C .
SURFACE REVIEW AND LETTERS, 1995, 2 (05) :573-577
[7]   ATOMIC-STRUCTURE OF CLEAN SI(113) SURFACES - THEORY AND EXPERIMENT [J].
DABROWSKI, J ;
MUSSIG, HJ ;
WOLFF, G .
PHYSICAL REVIEW LETTERS, 1994, 73 (12) :1660-1663
[8]  
DABROWSKI J, 1995, J VAC SCI TECHNOL B, V13, P1560
[9]   ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
TERSOFF, J ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195
[10]   ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY [J].
HAGSTRUM, HD ;
BECKER, GE .
PHYSICAL REVIEW B, 1973, 8 (04) :1580-1591