共 29 条
[1]
An T., UNPUB
[3]
TUNNELING MICROSCOPY OF SILICON AND GERMANIUM - SI(111) 7X7, SNGE(111) 7X7, GESI(111) 5X5, SI(111) 9X9, GE(111) 2X8, GE(100) 2X1, SI(110) 5X1
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1988, 6 (02)
:472-477
[5]
(110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1979, 19 (04)
:2074-2082
[8]
DABROWSKI J, 1995, J VAC SCI TECHNOL B, V13, P1560
[9]
ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE
[J].
PHYSICAL REVIEW LETTERS,
1987, 58 (12)
:1192-1195
[10]
ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY
[J].
PHYSICAL REVIEW B,
1973, 8 (04)
:1580-1591