Terahertz emission due to interminiband resonant Zener tunneling in wide-miniband GaAs/Al0.3Ga0.7As superlattices

被引：19

作者：

Shimada, Y ^{[1
]}

Sekine, N ^{[1
]}

Hirakawa, K ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 24期

关键词：

D O I：

10.1063/1.1759382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated terahertz (THz) emission induced by high-field electron transport in biased wide-miniband GaAs/Al0.3Ga0.7As superlattices. With increasing bias electric fields, two distinct regimes are observed in the bias-field dependence of the emitted THz intensity. These two regimes are attributed to the intraminiband transport and interminiband Zener tunneling regimes, respectively. In the Zener tunneling regime, quasiperiodic structures are observed in the bias field dependence of the emitted THz intensity and are identified to be due to the resonant Zener tunneling between the Wannier-Stark ladders associated with the ground and excited minibands. (C) 2004 American Institute of Physics.

引用

页码：4926 / 4928

页数：3

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