Formation of anomalous defect structure on GaSb surface by low temperature Sn ion-implantation

Defect formation in (100) GaSb by 60 keV Sn+ ion-implantation at 150-153 K is investigated using cross-sectional TEM, SEM and EDX An anomalous structure consisting of many cells, which looks like a honey comb. was formed on the surface implanted with 8.9 x 10(18) ions/m(2), The diameter and the depth of a cell A ere about 50 nm and 220-250 nm respectively. The thickness of the walls partitioning the cell, was about I D nm. The upper part of the partitioning wall is amorphous and rich in Ga. while the lower part shows crystalline structure. A heavily strained region of 50 nm thickness. corresponding to the maximum depth of the projected Sri ions. was observed under the cells. This defect structure is compared with similar defects which have been observed in ion-implanted GaSb. The defect formation mechanism is discussed. and ail explanation based on movement of the implantation induced point defects is proposed. It is assumed that hills and hollows are formed in the early stage of implantation. The point defects created on the hills do not contribute to the development of the defect structure, because they annihilate almost completely by the recombination of vacancy and interstitial and by the movement to the near surface sink. However, under the hollows. vacancies which escaped recombination remain. and the interstitial atoms. which are highly mobile at low temperatures, migrate far from there to aggregate under the hills, The hollows become deeper by the movement of the remaining vacancies to the surface, and the hills develop into the walls by the migration of the interstitial atoms from the surrounding hollows.