Improved GeOI substrates for pMOSFET off-state leakage control

被引：19

作者：

Romanjek, K. ^{[1
]}

Augendre, E. ^{[1
]}

Van Den Daele, W. ^{[2
]}

Grandchamp, B. ^{[1
]}

Sanchez, L. ^{[1
]}

Le Royer, C. ^{[1
]}

Hartmann, J. -M. ^{[1
]}

Ghyselen, B. ^{[3
]}

Guiot, E. ^{[3
]}

Bourdelle, K. ^{[3
]}

Cristoloveanu, S. ^{[2
]}

Boulanger, F. ^{[1
]}

Clavelier, L. ^{[1
]}

机构：

[1] CEA, LETI, MINATEC, F-38054 Grenoble, France

[2] IMEP INP Grenoble Minatec, F-38016 Grenoble, France

[3] SOITEC, F-38190 Bernin, France

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 7-9期

关键词：

Germanium on insulator (GeOI); pMOSFET; Parasitic leakage; Ge-buried oxide (BOX) interface; Silicon passivation; PASSIVATION; TEMPERATURE; PERFORMANCE; DEPOSITION; SI(001); LAYERS;

D O I：

10.1016/j.mee.2009.03.069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The origin of parasitic leakage that occurs in some GeOI pMOSFETs has been investigated and located at the Ge-buried oxide (BOX) interface. Silicon passivation of that interface was found to be effective in reducing this current. An optimum thickness of the buried silicon capping is required to reduce the parasitic leakage current while preserving Ge-like back channel transport properties. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1585 / 1588

页数：4

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