Microwave properties of low-fired Li2ZnTi3O8 ceramics doped with CuO-Bi2O3-V2O5

被引:20
作者
He, Ming [1 ,2 ]
Zhang, Huaiwu [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China
[2] Chengdu Technol Univ, Dept Commun Engn, Chengdu, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Li2ZnTi3O8; Low-fired ceramics; CuO-V2O5-Bi2O3; Microwave properties; DIELECTRIC-PROPERTIES; MIXTURES;
D O I
10.1016/j.jallcom.2013.10.108
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The low-fired Li2ZnTi3O8 microwave ceramics have been prepared by the conventional solid-state ceramic route. The effect of CuO-V2O5-Bi2O3 addition on the sinterability, microstructure, and microwave dielectric properties of Li2ZnTi3O8 dielectric ceramics has been investigated. It is demonstrated that the addition of low-melting CuO-V2O5-Bi2O3 can promote the densification of ceramics through liquid-phase sintering and lower the sintering temperature of Li2ZnTi3O8 ceramics from 1150 to 875 degrees C. The dense 0.25 wt% CuO-1.5 wt% Bi2O3-(x = 1.5) wt% V2O5 doped Li2ZnTi3O8 ceramics prepared at 875 degrees C have excellent dielectric properties of epsilon(r) = 25.63, Q x f = 53,400 GHz and tau(f) = -5.27 ppm/degrees C. (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码:627 / 632
页数:6
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