Stabilization of the delta-phase in Bi2O3 thin films

被引：44

作者：

Gomez, Celia L. ^{[1
]}

Depablos-Rivera, Osmary ^{[1
]}

Medina, Juan C. ^{[1
]}

Silva-Bermudez, Phaedra ^{[1
]}

Muhl, Stephen ^{[1
]}

Zeinert, Andreas ^{[2
]}

Rodil, Sandra E. ^{[1
]}

机构：

[1] Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico

[2] Univ Picardie Jules Verne, Lab Phys Mat Condensee, Amiens, France

来源：

SOLID STATE IONICS | 2014年 / 255卷

关键词：

Bismuth oxide; Sputtering; Thin films; Thermal stability; OXIDE FUEL-CELLS; CUBIC BISMUTH OXIDES; ELECTRODEPOSITED DELTA-BI2O3; INTERMEDIATE-TEMPERATURE; NANOCRYSTALLINE ZIRCONIA; ELECTRICAL-CONDUCTIVITY; DEFECT STRUCTURE; ION CONDUCTORS; ELECTROLYTES; STABILITY;

D O I：

10.1016/j.ssi.2013.12.027

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we report the stabilization of the delta-phase of Bi2O3 thin films from room temperature (RT) to 500 degrees C by the addition of tantalum ions. The delta-Bi2O3 phase is the material presenting the highest ionic conductivity; as bulk it is stable in a reduced temperature range from 730 to 825 degrees C, while the alpha-phase is the RT stable phase. However, when produced by atomic aggregation methods as a nanometric thin film, the delta-phase can be maintained at atmospheric conditions and it actually reverts to the alpha-phase only after thermal annealing, such transformation usually occurs around 250-350 degrees Cby passing through the beta-phase. In this work, we report that tantalum addition during the deposition of the Bi2O3 films by magnetron sputtering allows the maintenance of the delta phase up to 500 degrees C upon thermal annealing in air. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：147 / 152

页数：6

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