Plasma-graphene interaction and its effects on nanoscale patterning

被引：29

作者：

Harpale, Abhilash ^{[1
]}

Panesi, Marco ^{[1
]}

Chew, Huck Beng ^{[1
]}

机构：

[1] Univ Illinois, Dept Aerosp Engn, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW B | 2016年 / 93卷 / 03期

基金：

美国国家科学基金会;

关键词：

WATER DESALINATION; HYDROGEN; REAXFF;

D O I：

10.1103/PhysRevB.93.035416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scalable and precise nanopatterning of graphene is an essential step for graphene-based device fabrication. Hydrogen-plasma reactions have been shown to narrow graphene only from the edges, or to selectively produce circular or hexagonal holes in the basal plane of graphene, but the underlying plasma-graphene chemistry is unknown. Here, we study the hydrogen-plasma etching of monolayer graphene supported on SiO2 substrates across the range of plasma ion energies using scale-bridging molecular dynamics (MD) simulations based on reactive force-field potential. Our results uncover distinct etching mechanisms, operative within narrow ion energy windows, which fully explain the differing plasma-graphene reactions observed experimentally. Specific ion energy ranges are demonstrated for stable isotropic (similar to 2 eV) versus anisotropic hole growth (similar to 20-30 eV) within the basal plane of graphene, as well as for pure edge etching of graphene (similar to 1 eV). Understanding the complex plasma-graphene chemistry opens up a means for controlled patterning of graphene nanostructures.

引用

页数：10

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