Donor-related photoionization cross-section of GaAs-(Ga,Al)As quantum dots: hydrostatic pressure effects

被引：24

作者：

Correa, JD

Porras-Montenegro, N

Duque, CA

机构：

[1] Univ Antioquia, Inst Fis, Medellin, Colombia

[2] Univ Valle, Dept Fis, Cali, Colombia

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 10期

关键词：

D O I：

10.1002/pssb.200404908

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using a variational method and the effective-mass approximation, we calculated the binding energy for shallow-donor impurities in spherical GaAs-(Ga, Al)As quantum dots. In this paper we present results for different dimensions of the structure and radial impurity positions. Calculations include the hydrostatic pressure effects. We discuss the hydrostatic pressure dependence on the binding energy and the photoionization cross-section. The measurement of photoionization in such systems would be of great interest in understanding the optical properties of carriers in quantum dots. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2440 / 2443

页数：4

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